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Recent Data: Raman mapping of stress in diamond crystals

  • 8 GPa, 1800oC, 30 sec, synthetic diamonds 15-20 micron size + Si (infiltration technique)
  • 8 GPa, 1800oC, 30 sec, synthetic diamonds 20-30 micron size + Si (infiltration technique)
  • 8 GPa, 1800oC, synthetic diamonds powder 40 micron size +Si (infiltration technique)
  • 10 GPa, 1600oC, 30 sec, natural diamonds 50-70 micron +Si (infiltration technique)
  • 10 GPa, 1800oC, 30 sec, natural diamonds 50-70 micron +Si (infiltration technique)
  • 10 GPa, 2000oC, 30 sec, natural diamonds 50-70 micron +Si (infiltration technique)
  • Table of Results

8 GPa, 1800oC, 30 sec, synthetic diamonds 15-20 micron size + Si (infiltration technique)


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8 GPa, 1800oC, 30 sec, synthetic diamonds 20-30 micron size +Si (infiltration technique)





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8 GPa, 1800oC, synthetic diamonds powder 40 micron size +Si (infiltration technique)



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10 GPa, 1600oC, 30 sec, natural diamonds 50-70 micron +Si (infiltration technique)


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10 GPa, 1800oC, 30 sec, natural diamonds 50-70 micron +Si (infiltration technique)











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10 GPa, 2000oC, 30 sec, natural diamonds 50-70 micron +Si (infiltration technique)







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Table of Results

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